IndiumV3, Chine, Analysis, bibRecord, 001949

Studies on microstructure bilayer film of ultrasonic dipped cadmium sulfide and d.c. sputtered indium tin oxide

Identifieur interne : 001949 ( Chine/Analysis ); précédent : 001948; suivant : 001950

Studies on microstructure bilayer film of ultrasonic dipped cadmium sulfide and d.c. sputtered indium tin oxide

Auteurs : RBID : Pascal:04-0279356

Descripteurs français

Pascal (Inist)
- Etude expérimentale, Microstructure, Au trempé, Méthode ultrasonore, Facteur transmission, Pulvérisation cathodique, Magnétron, Croissance cristalline en phase vapeur, Incidence rasante, Diffraction RX, Angle incidence, Microscopie électronique balayage, Microscopie force atomique, Bicouche, Cadmium sulfure, Composé binaire, Semiconducteur II-VI, Indium oxyde, Etain oxyde, Composé ternaire, CdS, Cd S, InSnO, In O Sn, 6855J, 8115C, 7840F.

English descriptors

KwdEn :
- Atomic force microscopy, Bilayers, Binary compounds, Cadmium sulfides, Cathode sputtering, Crystal growth from vapors, Dipping, Experimental study, Grazing incidence, II-VI semiconductors, Incidence angle, Indium oxides, Magnetrons, Microstructure, Scanning electron microscopy, Ternary compounds, Tin oxides, Transmittance, Ultrasonic method, XRD.

Abstract

A bilayer CdS/ITO film was obtained. The dipped CdS was grown by an ultrasonic colloid deposition (USCD) method. Microstructure of the CdS film made by USCD has a wider transmission range and a higher transmittance. Amorphous indium-tin-oxide (ITO) thin film was deposited using d.c. magnetron-sputtering at room temperature. The ITO films exhibited good conductivity and maximum transmittance of 94%. The CdS/ITO bilayer was investigated by means of GIXD (grazing incidence X-ray diffraction) at different incidence angles (α=0.20-5.00°) and XRD. We discuss a model for the thin bilayer film. SEM and AFM show that homogeneous CdS films with a bar-shaped ultrafine particles and ITO film with nanometer structure. The mechanism of the bilayer CdS/ITO film is discussed.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 00B485
to stream Main, to step Repository: 00AC03
to stream Chine, to step Extraction: 001949

Links to Exploration step

Pascal:04-0279356

Le document en format XML

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<author><name sortKey="Cui, H N" uniqKey="Cui H">H.-N. Cui</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Physics Department, University of Minho, GRF-Functional Coatings Group, Campus de Azurem</s1>
<s2>Guimaraes 4800-058</s2>
<s3>PRT</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Portugal</country>
<wicri:noRegion>Guimaraes 4800-058</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Key Laboratory of Rare Earth Chemistry and Physics, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences</s1>
<s2>Chang Chun 130022</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Chang Chun 130022</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Teixeira, V" uniqKey="Teixeira V">V. Teixeira</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Physics Department, University of Minho, GRF-Functional Coatings Group, Campus de Azurem</s1>
<s2>Guimaraes 4800-058</s2>
<s3>PRT</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<country>Portugal</country>
<wicri:noRegion>Guimaraes 4800-058</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Meng, L J" uniqKey="Meng L">L. J. Meng</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Departamento de Fisica, Institute Superior de Engenharia do Porto, Rua Dr. Antonio Bernardinho de Almeida 431</s1>
<s2>Porto 4200-072</s2>
<s3>PRT</s3>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Portugal</country>
<wicri:noRegion>Porto 4200-072</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Zhang, H J" uniqKey="Zhang H">H.-J. Zhang</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Key Laboratory of Rare Earth Chemistry and Physics, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences</s1>
<s2>Chang Chun 130022</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Chang Chun 130022</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">04-0279356</idno>
<date when="2004">2004</date>
<idno type="stanalyst">PASCAL 04-0279356 INIST</idno>
<idno type="RBID">Pascal:04-0279356</idno>
<idno type="wicri:Area/Main/Corpus">00B485</idno>
<idno type="wicri:Area/Main/Repository">00AC03</idno>
<idno type="wicri:Area/Chine/Extraction">001949</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0040-6090</idno>
<title level="j" type="abbreviated">Thin solid films</title>
<title level="j" type="main">Thin solid films</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Atomic force microscopy</term>
<term>Bilayers</term>
<term>Binary compounds</term>
<term>Cadmium sulfides</term>
<term>Cathode sputtering</term>
<term>Crystal growth from vapors</term>
<term>Dipping</term>
<term>Experimental study</term>
<term>Grazing incidence</term>
<term>II-VI semiconductors</term>
<term>Incidence angle</term>
<term>Indium oxides</term>
<term>Magnetrons</term>
<term>Microstructure</term>
<term>Scanning electron microscopy</term>
<term>Ternary compounds</term>
<term>Tin oxides</term>
<term>Transmittance</term>
<term>Ultrasonic method</term>
<term>XRD</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term>
<term>Microstructure</term>
<term>Au trempé</term>
<term>Méthode ultrasonore</term>
<term>Facteur transmission</term>
<term>Pulvérisation cathodique</term>
<term>Magnétron</term>
<term>Croissance cristalline en phase vapeur</term>
<term>Incidence rasante</term>
<term>Diffraction RX</term>
<term>Angle incidence</term>
<term>Microscopie électronique balayage</term>
<term>Microscopie force atomique</term>
<term>Bicouche</term>
<term>Cadmium sulfure</term>
<term>Composé binaire</term>
<term>Semiconducteur II-VI</term>
<term>Indium oxyde</term>
<term>Etain oxyde</term>
<term>Composé ternaire</term>
<term>CdS</term>
<term>Cd S</term>
<term>InSnO</term>
<term>In O Sn</term>
<term>6855J</term>
<term>8115C</term>
<term>7840F</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">A bilayer CdS/ITO film was obtained. The dipped CdS was grown by an ultrasonic colloid deposition (USCD) method. Microstructure of the CdS film made by USCD has a wider transmission range and a higher transmittance. Amorphous indium-tin-oxide (ITO) thin film was deposited using d.c. magnetron-sputtering at room temperature. The ITO films exhibited good conductivity and maximum transmittance of 94%. The CdS/ITO bilayer was investigated by means of GIXD (grazing incidence X-ray diffraction) at different incidence angles (α=0.20-5.00°) and XRD. We discuss a model for the thin bilayer film. SEM and AFM show that homogeneous CdS films with a bar-shaped ultrafine particles and ITO film with nanometer structure. The mechanism of the bilayer CdS/ITO film is discussed.</div>
</front>
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<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0>
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<fA05><s2>447-48</s2>
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<fA08 i1="01" i2="1" l="ENG"><s1>Studies on microstructure bilayer film of ultrasonic dipped cadmium sulfide and d.c. sputtered indium tin oxide</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of the 30th International Conference on Metallurgical Coatings and Thin Films, San Diego, California, April 28-May 2, 2003</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>CUI (H.-N.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>TEIXEIRA (V.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>MENG (L. J.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>ZHANG (H.-J.)</s1>
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<fA12 i1="01" i2="1"><s1>MATTHEWS (Allan)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="02" i2="1"><s1>MARCHEV (Krassimir)</s1>
<s9>ed.</s9>
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<fA12 i1="03" i2="1"><s1>PATSCHEIDER (Joerg)</s1>
<s9>ed.</s9>
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<fA12 i1="04" i2="1"><s1>PAULEAU (Yves)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>Physics Department, University of Minho, GRF-Functional Coatings Group, Campus de Azurem</s1>
<s2>Guimaraes 4800-058</s2>
<s3>PRT</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Key Laboratory of Rare Earth Chemistry and Physics, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences</s1>
<s2>Chang Chun 130022</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Departamento de Fisica, Institute Superior de Engenharia do Porto, Rua Dr. Antonio Bernardinho de Almeida 431</s1>
<s2>Porto 4200-072</s2>
<s3>PRT</s3>
<sZ>3 aut.</sZ>
</fA14>
<fA15 i1="01"><s1>Department of Engineering Materials, The University of Sheffield, Sir Robert Hadfield Bldg, Mappin St.</s1>
<s2>Sheffield, SI 3JD</s2>
<s3>GBR</s3>
<sZ>1 aut.</sZ>
</fA15>
<fA15 i1="02"><s1>The Gillette Company, Gillette Advanced Technology Center, 37 A Street</s1>
<s2>Needham, MA 02492-9120</s2>
<s3>USA</s3>
<sZ>2 aut.</sZ>
</fA15>
<fA15 i1="03"><s1>EMPA, Surface- and Joining Technology Ueberlandstr. 129</s1>
<s2>Duebendorf</s2>
<s3>CHE</s3>
<sZ>3 aut.</sZ>
</fA15>
<fA15 i1="04"><s1>National Polytechnic Institute of Grenoble, CNRS-LEMD, B.P. 166, 25 rue des Martyrs</s1>
<s2>38042 Grenoble</s2>
<s3>FRA</s3>
<sZ>4 aut.</sZ>
</fA15>
<fA18 i1="01" i2="1"><s1>AVS Science and Technology Society. Advanced Surface Engineering Division</s1>
<s3>USA</s3>
<s9>patr.</s9>
</fA18>
<fA20><s1>663-668</s1>
</fA20>
<fA21><s1>2004</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
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<fA43 i1="01"><s1>INIST</s1>
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<s5>354000119147031130</s5>
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<fA44><s0>0000</s0>
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<fA47 i1="01" i2="1"><s0>04-0279356</s0>
</fA47>
<fA60><s1>P</s1>
<s2>C</s2>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Thin solid films</s0>
</fA64>
<fA66 i1="01"><s0>CHE</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>A bilayer CdS/ITO film was obtained. The dipped CdS was grown by an ultrasonic colloid deposition (USCD) method. Microstructure of the CdS film made by USCD has a wider transmission range and a higher transmittance. Amorphous indium-tin-oxide (ITO) thin film was deposited using d.c. magnetron-sputtering at room temperature. The ITO films exhibited good conductivity and maximum transmittance of 94%. The CdS/ITO bilayer was investigated by means of GIXD (grazing incidence X-ray diffraction) at different incidence angles (α=0.20-5.00°) and XRD. We discuss a model for the thin bilayer film. SEM and AFM show that homogeneous CdS films with a bar-shaped ultrafine particles and ITO film with nanometer structure. The mechanism of the bilayer CdS/ITO film is discussed.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B60H55J</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B80A15C</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B70H40F</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Etude expérimentale</s0>
<s5>02</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Experimental study</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Microstructure</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Microstructure</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Au trempé</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Dipping</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>En templado</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Méthode ultrasonore</s0>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Ultrasonic method</s0>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Método ultrasonoro</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Facteur transmission</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Transmittance</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Factor transmisión</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Pulvérisation cathodique</s0>
<s5>07</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Cathode sputtering</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Magnétron</s0>
<s5>08</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Magnetrons</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Croissance cristalline en phase vapeur</s0>
<s5>09</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Crystal growth from vapors</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Incidence rasante</s0>
<s5>10</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Grazing incidence</s0>
<s5>10</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Incidencia rasante</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Diffraction RX</s0>
<s5>11</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>XRD</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Angle incidence</s0>
<s5>12</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Incidence angle</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Microscopie électronique balayage</s0>
<s5>13</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Scanning electron microscopy</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Microscopie force atomique</s0>
<s5>14</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Atomic force microscopy</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Bicouche</s0>
<s5>15</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Bilayers</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Cadmium sulfure</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Cadmium sulfides</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Composé binaire</s0>
<s5>17</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Binary compounds</s0>
<s5>17</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Semiconducteur II-VI</s0>
<s5>18</s5>
</fC03>
<fC03 i1="17" i2="3" l="ENG"><s0>II-VI semiconductors</s0>
<s5>18</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Indium oxyde</s0>
<s2>NK</s2>
<s5>19</s5>
</fC03>
<fC03 i1="18" i2="3" l="ENG"><s0>Indium oxides</s0>
<s2>NK</s2>
<s5>19</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>Etain oxyde</s0>
<s2>NK</s2>
<s5>20</s5>
</fC03>
<fC03 i1="19" i2="3" l="ENG"><s0>Tin oxides</s0>
<s2>NK</s2>
<s5>20</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>Composé ternaire</s0>
<s5>21</s5>
</fC03>
<fC03 i1="20" i2="3" l="ENG"><s0>Ternary compounds</s0>
<s5>21</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>CdS</s0>
<s4>INC</s4>
<s5>52</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>Cd S</s0>
<s4>INC</s4>
<s5>53</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>InSnO</s0>
<s4>INC</s4>
<s5>54</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>In O Sn</s0>
<s4>INC</s4>
<s5>55</s5>
</fC03>
<fC03 i1="25" i2="3" l="FRE"><s0>6855J</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="26" i2="3" l="FRE"><s0>8115C</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>57</s5>
</fC03>
<fC03 i1="27" i2="3" l="FRE"><s0>7840F</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>58</s5>
</fC03>
<fC07 i1="01" i2="3" l="FRE"><s0>Composé minéral</s0>
<s5>48</s5>
</fC07>
<fC07 i1="01" i2="3" l="ENG"><s0>Inorganic compounds</s0>
<s5>48</s5>
</fC07>
<fN21><s1>173</s1>
</fN21>
<fN44 i1="01"><s1>PSI</s1>
</fN44>
<fN82><s1>PSI</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>International Conference on Metallurgical Coatings and Thin Films</s1>
<s2>30</s2>
<s3>San Diego, California USA</s3>
<s4>2003-04-28</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

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Studies on microstructure bilayer film of ultrasonic dipped cadmium sulfide and d.c. sputtered indium tin oxide

Studies on microstructure bilayer film of ultrasonic dipped cadmium sulfide and d.c. sputtered indium tin oxide

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